any changing of specification will not be informed individual MMDT5401 plastic-encapsulate multi-chip (pnp+pnp) transistor r o h s c o m p l i a n t p r o d u c t h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e features marking : k4m 01-jan-2006 rev.b page 1 of 2 s o t - 3 6 3 dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026typ (0.65typ) .096(2.45) .085(2.15) .021ref (0.525)ref .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) 8 o o 0 e l e c t r i c a l c h a r a c t e r i s t i c s ( t a m b = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t o c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e v ( b r ) c b o i c = - 1 0 0 a , i e = 0 - 1 6 0 v c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e v ( b r ) c e o i c = - 1 m a , i b = 0 - 1 5 0 v e m i t t e r - b a s e b r e a k d o w n v o l t a g e v ( b r ) e b o i e = - 1 0 a , c = 0 - 5 v c o l l e c t o r c u t - o f f c u r r e n t i c b o v c b = - 1 2 0 v , i e = 0 - 0 . 0 5 a e m i t t e r c u t - o f f c u r r e n t i e b o v e b = - 3 v , i c = 0 - 0 . 0 5 a h f e ( 1 ) v c e = - 5 v , i c = - 1 m a 5 0 h f e ( 2 ) v c e = - 5 v , i c = - 1 0 m a 6 0 2 4 0 d c c u r r e n t g a i n h f e ( 3 ) v c e = - 5 v , i c = - 5 0 m a 5 0 v c e ( s a t ) 1 i c = - 1 0 m a , i b = - 1 m a - 0 . 2 v c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v c e ( s a t ) 2 i c = - 5 0 m a , i b = - 5 m a - 0 . 5 v v b e ( s a t ) 1 i c = - 1 0 m a , i b = - 1 m a - 1 v b a s e - e m i t t e r s a t u r a t i o n v o l t a g e v b e ( s a t ) 2 i c = - 5 0 m a , i b = - 5 m a - 1 v t r a n s i t i o n f r e q u e n c y f t v c e = - 1 0 v , i c = - 1 0 m a , f = 1 0 0 m h z 1 0 0 3 0 0 m h z o u t p u t c a p a c i t a n c e c o b v c b = - 1 0 v , i e = 0 , f = 1 m h z 6 p f n o i s e f i g u r e n f c e = - 5 . 0 v , i c = - 2 0 0 a , r s = 1 0 , f = 1 . 0 k h z 8 . 0 d b v i [ a b s o l u t e m a x i m u m r a t i n g s c o l l e c t o r - b a s e v o l t a g e c o l l e c t o r - e m i t t e r v o l t a g e e m i t t e r - b a s e v o l t a g e c o l l e c t o r c u r r e n t - c o n t i n u o u s c o l l e c t o r d i s s i p a t i o n o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e a v v w v i c c v c b o v c e o p c t j , t s t g - 1 6 0 - 5 - 0 . 2 - 1 5 0 0 . 2 - 5 5 ~ + 1 5 0 p a r a m e t e r s y m b o l r a t i n g s u n i t o v e b o ( t a m b = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) o * e p i t a x i a l p l a n a r d i e c o n s t r u c t i o n * c o m p l e m e n t a r y n p n t y p e a v a i l a b l e ( m m d t 5 5 5 1 ) e 2 b 2 e 1 c 2 b 1 c 1
01-j an-2006 rev.b page 2 of 2 MMDT5401 plastic-encapsulate multi-chip (pnp+pnp) transistor elektronische bauelemente any changing of specification will not be informed individual http://www.secosgmbh.com typical characteristics MMDT5401
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